ATP201
Taping Speci ? cation
ATP201-TL-H
No. A1547-5/7
相关PDF资料
ATP203-TL-H MOSFET N-CH 30V 75A ATPAK
ATP204-TL-H MOSFET N-CH 30V 100A ATPAK
ATP206-TL-H MOSFET N-CH 40V 40A ATPAK
ATP207-TL-H MOSFET N-CH 40V 65A ATPAK
ATP208-TL-H MOSFET N-CH 40V 90A ATPAK
ATP212-TL-H MOSFET N-CH 60V 35A ATPAK
ATP213-TL-H MOSFET N-CH 60V 50A ATPAK
ATP214-TL-H MOSFET N-CH 60V 75A ATPAK
相关代理商/技术参数
ATP201-V-TL-H 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ATP202 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
ATP202_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ATP202-TL-H 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ATP203 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
ATP203_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ATP203-TL-H 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ATP204 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications